5-14

File Number

2278.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRF9140

-19A, -100V, 0.200 Ohm, P-Channel Power

MOSFET

These are P-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

Formerly developmental type TA17521.

Features

• -19A, -100V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-204AA

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF9140

TO-204AA

IRF9140

NOTE: When ordering, include the entire part number.

G

D

S

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

Data Sheet

February 1999