IRF9540 datasheet(5/7 Pages) INTERSIL

No. de pieza	IRF9540

Descripción Electrónicos	19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

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Fabricante Electrónico	INTERSIL [Intersil Corporation]

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4-19

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (

oC)

1.15

1.05

0.95

0.85

0.75

ID = 250µA

2000

400

0

-20

-50

1200

VDS, DRAIN TO SOURCE VOLTAGE (V)

1600

800

-10

-30

-40

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

VGS = 0V, f = 1MHz

CISS

COSS

CRSS

9

6

3

0

-20

-40

ID, DRAIN CURRENT (A)

0

15

12

-60

-80

-100

TJ = 125

oC

TJ = 25

oC

TJ = -55

oC

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

0.4

1.0

1.2

1.6

1.8

0.6

VSD, SOURCE TO DRAIN VOLTAGE (V)

0.8

1.4

0.1

1

10

100

TJ = 25

oC

TJ = 150

oC

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

Qg(TOT), GATE CHARGE (nC)

020

40

60

80

-10

- 5

0

VDS = -20V

VDS = -50V

VDS = -80V

ID = -19A

IRF9540, RF1S9540SM

Número de pieza similar - IRF9540

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