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IRFF310 Datasheet(PDF) 2 Page - Intersil Corporation |
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IRFF310 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 7 page 2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRFF310 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 400 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 400 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 1.35 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 5.5 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 15 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.12 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 150 mJ Operating and StorageTemperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) 400 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX,VGS = 10V 1.35 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 0.8A (Figures 8, 9) - 3.3 3.600 Ω Forward Transconductance (Note 2) gfs VDS, = 10V, ID = 1.2A (Figure 12) 1.0 1.2 - S Turn-On Delay Time td(ON) VDD ≈ 0.5 x Rated BVDSS, RG = 9.1Ω, ID ≈ 1.35A, RL = 144.5Ω for BVDSS = 400V, RL = 126Ω for BVDSS = 350V (Figures 17, 18), MOSFET Switching Times are Essentially Independent of Operating Temperature - 3 10 ns Rise Time tr -10 20 ns Turn-Off Delay Time td(OFF) - 5 10 ns Fall Time tf - 8 15 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 1.35A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figures 14, 19, 20), Gate Charge is Essentially Independent of Operating Temperature - 6 7.5 nC Gate to Source Charge Qgs -3 - nC Gate to Drain “Miller” Charge Qgd -3 - nC Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 135 - pF Output Capacitance COSS -35 - pF Reverse-Transfer Capacitance CRSS -8 - pF Internal Drain Inductance LD Measured from the Drain Lead, 5mm (0.2in) from Header to Center of Die Modified MOSFET Symbol Showing the Internal Device Inductances - 5.0 - nH Internal Source Inductance LS Measured from the Source Lead, 5mm (0.2in) from Header and Source Bonding Pad -15 - nH Thermal Resistance Junction to Case RθJC - - 8.33 oC/W Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 175 oC/W LD LS D S G IRFF310 |
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