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SI2321DS Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2321DS Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 5 page SMD Type www.kexin.com.cn 4 MOSFET . P-Channel Enhancement MOSFET SI2321DS (KI2321DS) ■ Typical Characterisitics -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 ID = 250 A 1.0 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 6 7 8 0.1 10 20 ID = 3.3 A 0.01 0 1 6 10 2 4 10 600 0.1 0.0 0.2 0.4 0.6 0.8 TJ = 150 C Threshold Voltage TJ - Temperature ( C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VSD V ) V ( e g a tl o V n i a r D - o t- e c r u o S - GS - Gate-to-Source Voltage (V) Time (sec) 8 100 TA = 25 C TJ = 25 C Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 Limited by rDS(on) 0.01 10 TA = 25 C Single Pulse 10 ms 100 ms dc, 100 s, 10 s, 1 s 0.1 100 s, 10 s 1 1 ms |
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