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SI2325DS-HF-3 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2325DS-HF-3 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 5 page SMD Type www.kexin.com.cn 1 MOSFET ■ Features ● VDS (V) =-150V ● ID =-0.69A (VGS =-10V) ● RDS(ON) < 1.2Ω (VGS =-10V) ● RDS(ON) < 1.3Ω (VGS =-6V) G S D 2 3 1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Ta = 25℃ -0.69 -0.53 Ta = 70℃ -0.55 -0.43 Pulsed Drain Current IDM Single-Pluse Avalanche Current L=1.0mH IAS Single-Pulse Avalanche Energy L=1.0mH EAS mJ Power Dissipation Ta = 25℃ 1.25 0.75 Ta = 70℃ 0.8 0.48 Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State Thermal Resistance.Junction- to-Foot RthJF Junction Temperature TJ Storage Temperature Range Tstg 4.5 A 1.01 ℃ 100 166 50 150 -55 to 150 W RthJA -150 ± 20 ID V ℃ /W -1.6 PD ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish P-Channel MOSFET SI2325DS-HF (KI2325DS-HF) 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain |
Número de pieza similar - SI2325DS-HF-3 |
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Descripción similar - SI2325DS-HF-3 |
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