SI3437DV datasheet(1/5 Pages) KEXIN

No. de pieza	SI3437DV

Descripción Electrónicos	P-Channel MOSFET

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

P-Channel MOSFET

SI3437DV (KI3437DV)

■

Features

●

VDS (V) =-150V

●

ID =-1.4 A (VGS =-10V)

●

RDS(ON) ＜ 750mΩ (VGS =-10V)

●

RDS(ON) ＜ 790mΩ (VGS =-6V)

1

2

3

4

5

6

Unit: mm

0.15 +0.02

-0.02

SOT-23-6

(

)

+0.01

-0.01

+0.2

-0.1

0.4-0.1

+0.1

1. Drain

2. Drain

3.Gate

4. Source

5. Drain

6. Drain

■

Absolute Maximum Ratings Ta = 25℃

Symbol

Rating

Unit

VDS

-150

VGS

±

20

Tc = 25 °C

-1.4

Tc = 70 °C

-1.1

Ta = 25 °C (Note.1,2)

-1.1

Ta = 70 °C (Note.1,2)

-0.88

IDM

-5

Avalanche Current

IAS

5

Single-Pulse Avalanche Energy

EAS

1.25

mJ

Tc = 25 °C

3.2

Tc = 70 °C

2.1

Ta = 25 °C (Note.1,2)

2

Ta = 70 °C (Note.1,2)

1.25

Thermal Resistance.Junction- to-Ambient

t ≤ 5 s (Note.3)

RthJA

62.5

Thermal Resistance.Junction- to-Case

Steady State

RthJC

39

TJ

150

Tstg

-55 to 150

Junction Temperature

Junction Storage Temperature Range

Continuous Drain Current (TJ = 150 °C)

ID

Power Dissipation

PD

L = 0.1 mH

Parameter

Drain-Source Voltage

Gate-Source Voltage

Pulsed Drain Current

V

℃

/W

℃

W

A

Note.1: t = 5 s.

Note.2: Surface Mounted on 1" x 1" FR4 board.

Note.3: Maximum under Steady State conditions is 110 °C/W.

S

G

D

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SI3437DV Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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