DATA SHEET

SILICON TRANSISTOR

NE68033 / 2SC3585

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISOR

DATA SHEET

Document No. P10361EJ4V1DS00 (4th edition)

Date Published March 1997 N

DESCRIPTION

The

NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed

for use in low-noise and small signal amplifiers from VHF band to UHF

band.

The

NE68033 / 2SC3585 features excellent power gain with very

low-noise figures.

The

NE68033 / 2SC3585 employs direct nitride

passivated base surface process (DNP process) which is a proprietary

new fabrication technique which provides excellent noise figures at

high current values.

This allows excellent associated gain and very

wide dynamic range.

FEATURES

• NF

1.8 dB TYP.

@f = 2.0 GHz

• Ga

9 dB TYP.

@f = 2.0 GHz

C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

200

mW

Junction Temperature

150

C

Storage Temperature

65 to +150

C

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

50

100

250

Gain Bandwidth Product

10

GHz

Feed-Back Capacitance

0.3

0.8

pF

Insertion Power Gain

6.0

8.0

dB

Maximum Available Gain

MAG

10

dB

Noise Figure

NF

1.8

3.0

dB

*

Pulse Measurement PW

 350
s, Duty Cycle  2 %

** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

Class

R43/Q *

R44/R *

R45/S *

Marking

R43

R44

R45

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

PACKAGE DIMENSIONS

(Units: mm)

1.5

2

1

3

Marking

PIN CONNECTIONS

1.

2.

3.

Emitter

Base

Collector

2.8±0.2

0.65

+0.1

−0.15

JEITA

Part No.