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IRF1310NS Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF1310NS
Descripción Electrónicos  Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF1310NS Datasheet(HTML) 1 Page - International Rectifier

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IRF1310NS/L
HEXFET® Power MOSFET
PD - 91514B
l Advanced Process Technology
l Surface Mount (IRF1310NS)
l Low-profile through-hole (IRF1310NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF1310NL) is available for low-
profile applications.
Description
VDSS =100V
RDS(on) = 0.036Ω
ID = 42A
2
D
P ak
TO-26 2
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.95
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
Thermal Resistance
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V…
42
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V…
30
A
IDM
Pulsed Drain Current
…
140
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
160
W
Linear Derating Factor
1.1
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚…
420
mJ
IAR
Avalanche Current

22
A
EAR
Repetitive Avalanche Energy

16
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
S
D
G
5/13/98


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