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IRF5803D2 Datasheet(PDF) 4 Page - International Rectifier

No. de pieza IRF5803D2
Descripción Electrónicos  FETKY??MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm)
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF5803D2 Datasheet(HTML) 4 Page - International Rectifier

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IRF5803D2
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
-
Fig 7. Typical Source-Drain Diode
Forward Voltage
Power Mosfet Characteristics
1
10
100
VDS, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
Coss
Crss
Ciss
VGS = 0V,
f = 100 KHZ
C iss
= Cgs + Cgd ,
Cds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
5
10
15
20
25
30
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
G

I =
D
-3.4A

V
=-20V
DS
V
=-32V
DS
0.1
1
10
100
0.4
0.8
1.2
1.6
-V
,Source-to-Drain Voltage (V)
SD

V
= 0 V
GS

T = 25 C
J
°

T = 150 C
J
°
1
10
100
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
TA = 25°C
TJ = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec


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