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IRF5851 Datasheet(PDF) 2 Page - International Rectifier |
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IRF5851 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 14 page  IRF5851 2 www.irf.com Parameter Min. Typ. Max. Units Conditions N-Ch 20 —— VGS = 0V, ID = 250µA P-Ch -20 —— VGS = 0V, ID = -250µA N-Ch — 0.016 — Reference to 25°C, ID = 1mA P-Ch — -0.011 — Reference to 25°C, ID = -1mA —— 0.090 VGS = 4.5V, ID = 2.7A —— 0.120 VGS = 2.5V, ID = 2.2A —— 0.135 VGS = -4.5V, ID = -2.2A —— 0.220 VGS = -2.5V, ID = -1.7A N-Ch 0.60 — 1.25 VDS = VGS, ID = 250µA P-Ch -0.45 — -1.2 VDS = VGS, ID = -250µA N-Ch 5.2 —— VDS = 10V, ID = 2.7A P-Ch 3.5 —— VDS = -10V, ID = -2.2A N-Ch —— 1.0 VDS = 16 V, VGS = 0V P-Ch —— -1.0 VDS = -16V, VGS = 0V N-Ch —— 25 VDS = 16 V, VGS = 0V, TJ = 70°C P-Ch —— -25 VDS = -16V, VGS = 0V, TJ = 70°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 12V N-Ch — 4.0 6.0 P-Ch — 3.6 5.4 N-Ch — 0.95 — P-Ch — 0.66 — N-Ch — 0.83 — P-Ch — 5.7 — N-Ch — 6.6 — P-Ch — 8.3 — N-Ch — 1.2 — P-Ch — 14 — N-Ch — 15 — P-Ch — 31 — N-Ch — 2.4 — P-Ch — 28 — N-Ch — 400 — P-Ch — 320 — N-Ch — 48 — P-Ch — 56 — N-Ch — 32 — P-Ch — 40 — V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V/°C Ω V S µA nC ns pF N-Channel ID = 2.7A, VDS = 10V, VGS = 4.5V P-Channel ID = -2.2A, VDS = -10V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.0A, RG = 6.2Ω, VGS = 4.5V P-Channel VDD = -10V, ID = -1.0A, RG = 6.0Ω, VGS = -4.5V N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz N-Ch P-Ch Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 & 26 ) Surface mounted on FR-4 board, t ≤ 10sec. Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Parameter Min. Typ. Max. Units Conditions N-Ch —— 0.96 P-Ch —— -0.96 N-Ch —— 11 P-Ch —— -9.0 N-Ch —— 1.2 TJ = 25°C, IS = 0.96A, VGS = 0V P-Ch —— -1.2 TJ = 25°C, IS = -0.96A, VGS = 0V N-Ch — 25 38 P-Ch — 23 35 N-Ch — 6.5 9.8 P-Ch — 7.7 12 Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF = 0.96A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -0.96A, di/dt = -100A/µs |
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