PD - 93894A

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design , that Inter-

national Rectifier is well known for,

provides the de-

signer with an extremely efficient and reliable device

for use in battery and load management.

The TSSOP-8 package, has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium.

The low profile (<1.1mm) of the TSSOP-8 will allow it to fit

easily into extremely thin application environments such

as portable electronics and PCMCIA cards.

IRF7700

Description

TSSOP-8

Parameter

Max.

Units

Drain- Source Voltage

-20

V

±8.6

±6.8

A

Pulsed Drain Current



±68

Power Dissipation

1.5

Power Dissipation

0.96

Linear Derating Factor

0.01

W/°C

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

83

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

6/19/00

-20V

-8.6A

-7.3A

4 = G

3 = S

2 = S

1 = D

1

2

3

4

G

D

S

5

6

7

8

8 = D

7 = S

6 = S

5 = D