10/04/00

IRF7706

Absolute Maximum Ratings

www.irf.com

1

Thermal Resistance

Parameter

Max.

Units

Drain-Source Voltage

-30

V

-7.0

-5.7

A

Pulsed Drain Current



-28

Maximum Power Dissipation

ƒ

1.51

W

Maximum Power Dissipation

ƒ

0.96

W

Linear Derating Factor

0.01

W/°C

Gate-to-Source Voltage

± 20

V

Junction and Storage Temperature Range

-55 to + 150

°C

PD -94003

-30V

22m

-

7.0A

36m

-5.6A

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

83

°C/W

TSSOP-8

4 = G

3 = S

2 = S

1 = D

1

2

3

4

G

D

S

5

6

7

8

8 = D

7 = S

6 = S

5 = D

Description

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides the de-

signer with an extremely efficient and reliable device

for battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.