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IRF7706 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7706 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET 10/04/00 IRF7706 Absolute Maximum Ratings www.irf.com 1 Thermal Resistance Parameter Max. Units VDS Drain-Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -7.0 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -5.7 A IDM Pulsed Drain Current -28 PD @TA = 25°C Maximum Power Dissipation 1.51 W PD @TA = 70°C Maximum Power Dissipation 0.96 W Linear Derating Factor 0.01 W/°C VGS Gate-to-Source Voltage ± 20 V TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C PD -94003 VDSS RDS(on) max ID -30V 22m Ω@VGS = -10V - 7.0A 36m Ω@VGS = -4.5V -5.6A Parameter Max. Units RθJA Maximum Junction-to-Ambient 83 °C/W TSSOP-8 4 = G 3 = S 2 = S 1 = D 1 2 3 4 G D S 5 6 7 8 8 = D 7 = S 6 = S 5 = D Description l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides the de- signer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. |
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