 |
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
|
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
IRF9540NS Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
|
||||||||||||||||||||||||||||||
IRF9540NS Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
|
|
2 / 10 page  IRF9540NS/L Starting T J = 25°C, L = 7.1mH RG = 25Ω, IAS = -11A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: I SD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF9540N data and test conditions Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.117 Ω VGS = -10V, ID = -11A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 5.3 ––– ––– S VDS = -50V, ID = -11A ––– ––– -25 µA VDS = -100V, VGS = 0V ––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 97 ID = -11A Qgs Gate-to-Source Charge ––– ––– 15 nC VDS = -80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 51 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 15 ––– VDD = -50V tr Rise Time ––– 67 ––– ID = -11A td(off) Turn-Off Delay Time ––– 51 ––– RG = 5.1Ω tf Fall Time ––– 51 ––– RD = 4.2Ω, See Fig. 10 Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 1300 ––– VGS = 0V Coss Output Capacitance ––– 400 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -11A, VGS = 0V trr Reverse Recovery Time ––– 150 220 ns TJ = 25°C, IF = -11A Qrr Reverse Recovery Charge ––– 830 1200 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A S D G -23 -76 www.kersemi.com 2 2014-8-38 |
Número de pieza similar - IRF9540NS |
|
Descripción similar - IRF9540NS |
|
|
|
Enlace URL |
| Política de Privacidad |
| ALLDATASHEET.ES |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Spanish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
