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SD12 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza SD12
Descripción Electrónicos  Plasetic Encapsulate ESD Protection Diodes
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Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SD12 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SD12
300 W, 12V
Plasetic Encapsulate ESD Protection Diodes
21-Aug-2014 Rev. C
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Cathode Band
G
E
A
J
F
D
H
C
B
1
2
DESCRIPTION
The SD12 is designed to protect voltage sensitive components from ESD.
Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, MP3 players, digital cameras
and many other portable applications where board space is at a premium.
APPLICATIONS
Stand-off voltage: 12V
Low leakage
Response time is typically < 1 ns
ESD rating of class 3 (>16kV) per human body model
IEC61000-4-2 level 4 ESD protection
These are Pb-Free devices
DEVICE MARKING: ZC, 6U
ABSOLUTE RATINGS (TA = 25°C )
RATING
SYMBOL
VALUE
UNIT
Air
±15
IEC 61000-4-2 (ESD)
Contact
±8.0
KV
ESD voltage
per human body model
30
KV
Total power dissipation on FR-5 Board (Note 1)
PD
200
mW
Thermal Resistance Junction−to−Ambient
RθJA
625
°C / W
Junction and Storage Temperature Range
TJ, TSTG
-55 ~ +150
°C
Lead Solder Temperature – Maximum (10 Second Duration)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
recommended. Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
1. FR-5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(Ratings at 25°C ambient temperature unless otherwise specified. VF = 0.9V max at IF = 10mA for all types)
PARAMETER
SYMBOL
RATING
UNIT
Working Peak Reverse Voltage (Max.)
VRWM
12
V
Maximum Reverse Leakage Current @ VRWM(Max.)
IR
1.0
μA
Max.
15.75
V
Breakdown Voltage @ IT
Min.
VBR
13.3
V
Test Current
IT
1.0
mA
Clamping Voltage @ IPP=5A
VC
22
V
Maximum Reverse Peak Pulse Current (Max.) *
IPP
12
A
Clamping Voltage @ IPP (Max.) *
VC
33
V
Peak Power Dissipation *
PPK
300
W
Max. Capacitance @ VR =0 and f =1MHz (Typ.)
C
150
pF
+Surge current waveform per Figure 1.
2.
VBR is measured with a pulse test current IT at an ambient temperature of 25°C
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOD - 323
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.05 REF.
E
0.080
0.180
B
0.20 REF.
F
1.15
1.45
C
0.80
1.00
G
1.60
1.80
D
0.25
0.40
H
2.30
2.70


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