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IRFD224 Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRFD224
Descripción Electrónicos  Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=0.63A)
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFD224 Datasheet(HTML) 2 Page - International Rectifier

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Parameter
Min. Typ. Max. Units Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
250
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
0.36
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
1.1
VGS = 10.0V, ID = 0.38A
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
1.5
S
VDS = 50V, ID = 2.6A
IDSS
Drain-to-Source Leakage Current
25
VDS = 400V, VGS = 0V
250
VDS = 320V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
100
VGS = 20V
Gate-to-Source Reverse Leakage
-100
VGS = -20V
Qg
Total Gate Charge
14
ID = 4.4A
Qgs
Gate-to-Source Charge
2.7
nC
VDS = 200V
Qgd
Gate-to-Drain ("Miller") Charge
7.8
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
7.0
VDD = 125V
tr
Rise Time
13
ID = 4.4A
td(off)
Turn-Off Delay Time
20
RG = 18Ω
tf
Fall Time
12
RD = 28Ω, See Fig. 10
LD
Internal Drain Inductance
4.0
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
6.0
from package
and center of
die contact
Ciss
Input Capacitance
260
VGS = 0V
Coss
Output Capacitance
77
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
15
ƒ = 1.0MHz, See Fig. 5
IRFD224
Notes:
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
1.8
V
TJ = 25°C, IS = 0.63A, VGS = 0V
trr
Reverse Recovery Time
200
400
ns
TJ = 25°C, IF = 4.4A
Qrr
Reverse RecoveryCharge
0.93
1.9
µC
di/dt = 100A/µs
ton
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 50V, starting TJ = 25°C, L = 15mH
RG = 25Ω, IAS = 2.5A. (See Figure 12)
ISD ≤ 4.4A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width
≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
5.0
0.63
A
µA
nA
ns
nH
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