IRFP254N datasheet(1/8 Pages) IRF

No. de pieza	IRFP254N

Descripción Electrónicos	Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

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Fabricante Electrónico	IRF [International Rectifier]

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Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

23

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

16

A

IDM

Pulsed Drain Current

92

PD @TC = 25°C

Power Dissipation

220

W

Linear Derating Factor

1.5

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

300

mJ

IAR

Avalanche Current

14

A

EAR

Repetitive Avalanche Energy

22

mJ

dv/dt

Peak Diode Recovery dv/dt

7.4

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

IRFP254N

HEXFET® Power MOSFET

7/20/01

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.68

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient

–––

40

Thermal Resistance

www.irf.com

1

VDSS = 250V

RDS(on) = 125mΩ

ID = 23A

S

D

G

PD - 94213

Absolute Maximum Ratings

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

l Simple Drive Requirements

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

Description

TO-247AC

Número de pieza similar - IRFP254N

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	IRFP254N	159Kb / 8P	Power MOSFET S-Pending-Rev. A, 24-Jun-08
International Rectifier	IRFP254NPBF	177Kb / 8P	HEXFET짰 Power MOSFET
Vishay Siliconix	IRFP254NPBF	159Kb / 8P	Power MOSFET S-Pending-Rev. A, 24-Jun-08

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IRFP254N Datasheet(PDF) 1 Page - International Rectifier

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