2SK3480_15 datasheet(3/10 Pages) RENESAS

No. de pieza	2SK3480

Descripción Electrónicos	MOS FIELD EFFECT TRANSISTOR

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©

2001

MOS FIELD EFFECT TRANSISTOR

2SK3480

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No.

D15078EJ1V0DS00 (1st edition)

Date Published

December 2001 NS CP(K)

Printed in Japan

DESCRIPTION

The 2SK3480 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Super low on-state resistance:

RDS(on)1 = 31 m

Ω MAX. (VGS = 10 V, ID = 25 A)

RDS(on)2 = 36 m

Ω MAX. (VGS = 4.5 V, ID = 25 A)

• Low Ciss: Ciss = 3600 pF TYP.

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

100

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25°C)

ID(DC)

±50

A

Drain Current (pulse)

Note1

ID(pulse)

±100

A

Total Power Dissipation (TC = 25°C)

PT1

84

W

Total Power Dissipation (TA = 25°C)

PT2

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

34

A

Single Avalanche Energy

Note2

EAS

116

mJ

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1%

2. Starting Tch = 25°C, RG = 25

Ω, VGS = 20

→ 0 V

THERMAL RESISTANCE

Channel to Case

Rth(ch-C)

1.48

°C/W

Channel to Ambient

Rth(ch-A)

83.3

°C/W

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3480

TO-220AB

2SK3480-S

TO-262

2SK3480-ZJ

TO-263

2SK3480-Z

TO-220SMD

Note

Note TO-220SMD package is produced only

in Japan.

(TO-220AB)

(TO-262)

(TO-263, TO-220SMD)

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