KRA733E datasheet(1/4 Pages) KEC

No. de pieza	KRA733E

Descripción Electrónicos	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

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Fabricante Electrónico	KEC [KEC(Korea Electronics)]

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2002. 7. 9

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SEMICONDUCTOR

TECHNICAL DATA

KRA730E~KRA734E

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 2

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

With Built-in Bias Resistors.

Simplify Circuit Design.

Reduce a Quantity of Parts and Manufacturing Process.

High Packing Density.

DIM MILLIMETERS

A

A1

B1

C

TES6

1.6 0.05

1.0 0.05

1.6 0.05

1.2 0.05

0.50

0.2 0.05

0.5 0.05

0.12 0.05

B

D

H

J

B1

B

1

2

3

6

4

P

P5

5

+_

1. Q EMITTER

4. Q COLLECTOR

3. Q BASE

5. Q BASE

6. Q COLLECTOR

1

2. Q EMITTER

2

1

2

EQUIVALENT CIRCUIT

MAXIMUM RATING (Ta=25

)

MARK SPEC

R1

C

E

B

Type Name

12

3

6

54

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-100

mA

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector Power Dissipation

PC *

200

mW

Junction Temperature

Tj

150

Storage TemperatureRange

Tstg

-55

150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-50V, IE=0

-

-100

nA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-100

nA

DC Current Gain

hFE

VCE=-5V, IC=-1mA

120

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-10mA, IB=-0.5mA

-

-0.1

-0.3

V

Transition Frequency

fT *

VCE=-10V, IC=-5mA

-

250

-

MHz

Input Resistor

KRA730E

R1

-

4.7

-

k

KRA731E

-

10

-

KRA732E

-

100

-

KRA733E

-

22

-

KRA734E

-

47

-

TYPE

KRA730E

KRA731E

KRA732E

KRA733E

KRA734E

MARK

JK

JM

JN

JO

JP

EQUIVALENT CIRCUIT (TOP VIEW)

1

Q1

23

65

4

Q2

Marking

* Total Rating.

Note : * Characteristic of transistor only.

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