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SS15P3S Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SS15P3S
Descripción Electrónicos  SMD Photovoltaic Solar Cell Protection Schottky Rectifier
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SS15P3S Datasheet(HTML) 1 Page - Vishay Siliconix

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SS15P3S
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-13
1
Document Number: 89128
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMD Photovoltaic Solar Cell Protection Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base
P/N-M3
-
halogen-free,
RoHS-compliant,
and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Notes
(1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink
(2) Free air, mounted on recommended copper pad area
(3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
IF(AV)
15 A
VRRM
30 V
IFSM
280 A
EAS
20 mJ
VF at IF = 15 A
0.42 V
TJ max.
150 °C
Package
TO-277A (SMPC)
Diode variations
Single die
K
2
1
TO-277A (SMPC)
eSMP
® Series
Anode 1
Anode 2
Cathode
K
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS15P3S
UNIT
Device marking code
153S
Maximum repetitive peak reverse voltage
VRRM
30
V
Maximum DC forward current (fig. 1)
IF
15 (1)
4.5 (2)
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
280
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TOP, TSTG
- 55 to + 150
°C
Junction temperature in DC forward current without reverse bias, t
 1 h (3)
TJ
 200
°C


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