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TSC873 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC873 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  TSC873 NPN Silicon Planar High Voltage Transistor 1/5 Version: C12 TO-92 SOT-223 PRODUCT SUMMARY BVCBO 600V BVCEO 400V IC 1A VCE(SAT) 0.5V @ IC / IB = 500mA / 100mA Features ● High BVceo, BVcbo ● High current gain Ordering Information Part No. Package Packing TSC873CT B0 TO-92 1Kpcs / Bulk TSC873CT A3 TO-92 2Kpcs / Ammo TSC873CW RPG SOT-223 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Structure ● Epitaxial Planar Type Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current DC IC 1 A Pulse 2 Total Power Dissipation @ TA=25 oC TO-92 Ptot 1 W SOT-223 1.2 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 100uA BVCBO 600 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 100uA BVEBO 9 -- -- V Collector-Base Cutoff Current VCB=600V ICBO -- -- 100 uA Collector-Emitter Cutoff Current VCE = 400V ICEO -- -- 1 mA Emitter-Base Cutoff Current VEB=8V IEBO -- -- 100 uA Collector-Emitter Saturation Voltage IC = 500mA, IB = 100mA VCE(SAT) 1 -- -- 0.5 V Collector-Emitter Saturation Voltage IC = 1A, IB = 250mA VCE(SAT) 2 -- -- 1 V Base-Emitter Saturation Voltage IC = 500mA, IB = 100mA VBE(SAT) 1 -- -- 1 V Base-Emitter Saturation Voltage IC = 1A, IB = 250mA VBE(SAT) 2 -- -- 1.2 V DC Current Transfer Ratio VCE = 10V, IC = 250mA hFE 80 -- -- Trun-on Time Vcc=125V,Ic=1A, IB1=IB2=200mA TON -- 1 -- uS Storage Time TSTG -- 4 -- uS Fall Time TOFF -- 0.7 -- uS Pin Definition: 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter |
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