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BC847CDLP Datasheet(PDF) 3 Page - Diodes Incorporated |
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BC847CDLP Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 6 page BC847CDLP Document number: DS30817 Rev. 7 - 2 3 of 6 www.diodes.com May 2013 © Diodes Incorporated BC847CDLP Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 — — V IC = 100µA, IB = 0 Collector-Emitter Breakdown Voltage BVCEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6 — — V IE = 100µA, IC = 0 DC Current Gain hFE 420 650 800 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage VCE(sat) — 55 130 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(sat) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage VBE(on) 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Cutoff Current ICES — — 15 nA VCE = 50V Collector-Cutoff Current ICBO — — — — 15 5 nA µA VCB = 30V VCB = 30V, TA = +150°C Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO — 2.0 — pF VCB = 10V, f = 1.0MHz Note: 6. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%. V , COLLECTOR-EMITTER VOLTAGE (V) Figure 2 Typical Collector Current vs. Collector-Emitter Voltage CE 0 0.05 0.10 0.15 0.20 0.25 01 2 34 56 I = 2mA B I = 4mA B I = 10mA B I = 6mA B I = 8mA B 0 200 400 600 800 1,000 1,200 1,400 0.1 10 1100 I , COLLECTOR CURRENT (mA) Figure 3 Typical DC Current Gain vs. Collector Current C V = 5V CE T = -55°C A T = 85°C A T = 150°C A T = 25°C A |
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