Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
STUD336S Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
|
STUD336S Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page S mHop Microelectronics C orp. a STU/D336S Symbol VDS VGS IDM A ID Units Parameter 30 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Max 30V 55A 9 @ VGS=4.5V 5.6 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed a A Ver 1.0 www.samhop.com.tw Jul,18,2012 1 Details are subject to change without notice. TC=25°C G G S S D D G G S S STU SERIES TO - 252AA( D- PAK ) STD SERIES TO - 251( I - PAK ) W PD °C -55 to 150 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 50 °C/W Thermal Resistance, Junction-to-Ambient R JA 3 °C/W Thermal Resistance, Junction-to-Case R JC TC=70°C A EAS mJ Single Pulse Avalanche Energy c TC=70°C W 55 161 42 Gre rr P Pr P P o rr 44 27 132 |
Número de pieza similar - STUD336S |
|
Descripción similar - STUD336S |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |