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DMC1030UFDB Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMC1030UFDB Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 9 page DMC1030UFDB Document number: DS36933 Rev.1 - 2 2 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1030UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Q1 N-CHANNEL Q2 P-CHANNEL Units Drain-Source Voltage VDSS 12 -12 V Gate-Source Voltage VGSS ±8 ±8 V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 5.1 4.1 -3.9 -3.1 A t < 5s TA = +25°C TA = +70°C ID 6.6 5.3 -5.0 -4.0 A Maximum Continuous Body Diode Forward Current (Note 5) IS 2 -1.7 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 35 -25 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) Steady State PD 1.36 W t < 5s 1.89 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 92 °C/W t < 5s 66 Thermal Resistance, Junction to Case (Note 5) RθJC 18 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics Q1 N-CHANNEL (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 12 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 μA VDS = 12V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 0.4 — 1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 17 34 mΩ VGS = 4.5V, ID = 4.6A — 20 40 VGS = 2.5V, ID = 4.2A — 24 50 VGS = 1.8V, ID = 3.8A — 28 70 VGS = 1.5V, ID = 1.5A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 4.8A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 1003 — pF VDS = 6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 132 — pF Reverse Transfer Capacitance Crss — 115 — pF Gate Resistance Rg — 11.3 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 12.2 — nC VDS = 10V, ID = 6.8A Total Gate Charge (VGS = 8V) — 23.1 — nC Gate-Source Charge Qgs — 1.3 — nC Gate-Drain Charge Qgd — 1.5 — nC Turn-On Delay Time tD(on) — 4.4 — ns VDD = 6V, VGS = 4.5V, RL = 1.1Ω, RG = 1Ω Turn-On Rise Time tr — 7.4 — ns Turn-Off Delay Time tD(off) — 18.8 — ns Turn-Off Fall Time tf — 4.9 — ns Body Diode Reverse Recovery Time trr — 7.6 — nS IS = 5.4A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 0.9 — nC IS = 5.4A, dI/dt = 100A/μs Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. |
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