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DMC1030UFDB Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza DMC1030UFDB
Descripción Electrónicos  COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC1030UFDB Datasheet(HTML) 2 Page - Diodes Incorporated

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DMC1030UFDB
Document number: DS36933 Rev.1 - 2
2 of 9
www.diodes.com
April 2014
© Diodes Incorporated
DMC1030UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Q1
N-CHANNEL
Q2
P-CHANNEL
Units
Drain-Source Voltage
VDSS
12
-12
V
Gate-Source Voltage
VGSS
±8
±8
V
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
5.1
4.1
-3.9
-3.1
A
t < 5s
TA = +25°C
TA = +70°C
ID
6.6
5.3
-5.0
-4.0
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
2
-1.7
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
35
-25
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Steady State
PD
1.36
W
t < 5s
1.89
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
92
°C/W
t < 5s
66
Thermal Resistance, Junction to Case (Note 5)
RθJC
18
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics Q1 N-CHANNEL (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
12
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
1.0
μA
VDS = 12V, VGS = 0V
Gate-Source Leakage
IGSS
±10
μA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
0.4
1
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
17
34
mΩ
VGS = 4.5V, ID = 4.6A
20
40
VGS = 2.5V, ID = 4.2A
24
50
VGS = 1.8V, ID = 3.8A
28
70
VGS = 1.5V, ID = 1.5A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 4.8A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
1003
pF
VDS = 6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
132
pF
Reverse Transfer Capacitance
Crss
115
pF
Gate Resistance
Rg
11.3
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
12.2
nC
VDS = 10V, ID = 6.8A
Total Gate Charge (VGS = 8V)
23.1
nC
Gate-Source Charge
Qgs
1.3
nC
Gate-Drain Charge
Qgd
1.5
nC
Turn-On Delay Time
tD(on)
4.4
ns
VDD = 6V, VGS = 4.5V,
RL = 1.1Ω, RG = 1Ω
Turn-On Rise Time
tr
7.4
ns
Turn-Off Delay Time
tD(off)
18.8
ns
Turn-Off Fall Time
tf
4.9
ns
Body Diode Reverse Recovery Time
trr
7.6
nS
IS = 5.4A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
0.9
nC
IS = 5.4A, dI/dt = 100A/μs
Notes:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.


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