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DMC1030UFDB-13 Datasheet(PDF) 5 Page - Diodes Incorporated |
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DMC1030UFDB-13 Datasheet(HTML) 5 Page - Diodes Incorporated |
5 / 9 page DMC1030UFDB Document number: DS36933 Rev.1 - 2 5 of 9 www.diodes.com April 2014 © Diodes Incorporated DMC1030UFDB Electrical Characteristics Q2 P-CHANNEL (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -12 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 μA VDS = -12V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.4 — -1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 37 59 mΩ VGS = -4.5V, ID = -3.6A — 48 81 VGS = -2.5V, ID = -3.1A — 69 115 VGS = -1.8V, ID = -2.6A — 88 215 VGS = -1.5V, ID = -0.5A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -3.7A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 1028 — pF VDS = -6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 285 — pF Reverse Transfer Capacitance Crss — 254 — pF Gate Resistance Rg — 19.6 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 13 — nC VDS = -10V, ID = -4.7A Total Gate Charge (VGS = -8V) — 20.8 — nC Gate-Source Charge Qgs — 1.8 — nC Gate-Drain Charge Qgd — 4.5 — nC Turn-On Delay Time tD(on) — 5.6 — ns VDD = -6V, VGS = -4.5V, RL = 1.6Ω, RG = 1Ω Turn-On Rise Time tr — 12.8 — ns Turn-Off Delay Time tD(off) — 30.7 — ns Turn-Off Fall Time tf — 25.4 — ns Body Diode Reverse Recovery Time trr — 31.6 — nS IS = -3.6A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 7.8 — nC IS = -3.6A, dI/dt = 100A/μs Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. -V , DRAIN -SOURCE VOLTAGE (V) Figure 12 Typical Output Characteristics DS 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 V = -0.9V GS V = -1.0V GS V = -3.5V GS V = -4.5V GS V = -4.0V GS V = -1.5V GS V = -1.8V GS V = -2.0V GS V = -3.0V GS -V , GATE-SOURCE VOLTAGE (V) GS Figure 13 Typical Transfer Characteristics 0 2 4 6 8 10 12 14 16 18 20 00.5 11.5 2 2.5 3 T = 150 C A ° T = 125 C A ° T = 85 C A ° T = 25 C A ° T = -55 C A ° V = -5.0V DS |
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