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DMC4028SSD Datasheet(PDF) 7 Page - Diodes Incorporated |
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DMC4028SSD Datasheet(HTML) 7 Page - Diodes Incorporated |
7 / 11 page DMC4028SSD Document Number: D35041 Rev: 2 - 2 7 of 11 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD Electrical Characteristics – Q2 P-Channel (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -40 — — V ID = -250 µA, VGS = 0V Zero Gate Voltage Drain Current IDSS — — -0.5 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS — — 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 – -3.0 V ID = -250 µA, VDS = VGS Static Drain-Source On-Resistance (Note 12) RDS(ON) — 0.039 0.050 Ω VGS = -10V, ID = -6A 0.060 0.079 VGS = -4.5V, ID = -5A Forward Transconductance (Notes 12 & 13) gfs — 16.6 — S VDS = -15V, ID = -6A Diode Forward Voltage (Note 13) VSD — -0.865 -1.1 V IS = -6A, VGS = 0V Reverse Recovery Time (Note 13) trr — 138 — ns IS = -6A, di/dt = 100A/µs Reverse Recovery Charge (Note 13) Qrr — 841 — nC DYNAMIC CHARACTERISTICS (Note 13) Input Capacitance Ciss — 674 — pF VDS = -20V, VGS = 0V f = 1MHz Output Capacitance Coss — 115 — pF Reverse Transfer Capacitance Crss — 67.7 — pF Total Gate Charge (Note 14) Qg — 7.0 — nC VGS = -4.5V VDS = -20V ID = -6A Total Gate Charge (Note 14) Qg — 14 — nC VGS = -10V Gate-Source Charge (Note 14) Qgs — 2.2 — nC Gate-Drain Charge (Note 14) Qgd — 3.7 — nC Turn-On Delay Time (Note 14) tD(on) — 2.3 — ns VDD = -20V, VGS = -10V ID = -6A, RG 6.0 Turn-On Rise Time (Note 14) tr — 14.1 — ns Turn-Off Delay Time (Note 14) tD(off) — 25.1 — ns Turn-Off Fall Time (Note 14) tf — 14.3 — ns Notes: 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2% 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures. |
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