DMG4511SK4_15 datasheet(7/9 Pages) DIODES

No. de pieza	DMG4511SK4

Descripción Electrónicos	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Fabricante Electrónico	DIODES [Diodes Incorporated]

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DMG4511SK4

Document number: DS32042 Rev. 4 - 2

7 of 9

www.diodes.com

July 2011

DMG4511SK4

0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

2.7

3.0

Fig. 18 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

I = -250µA

D

0

2

4

6

8

10

12

14

16

18

20

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 19 Diode Forward Voltage vs. Current

-V

, SOURCE-DRAIN VOLTAGE (V)

SD

T = 25°C

A

0

200

400

600

800

1,000

1,200

1,400

0

5

10

15

20

25

30

35

Fig. 20 Typical Total Capacitance

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

Ciss

Crss

C

oss

f = 1MHz

510

15

20

25

30

35

Fig. 21 Typical Leakage Current vs. Drain-Source Voltage

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

Fig. 22 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

T - T = P * R

(t)

Duty Cycle, D = t /t

JA

12

θ

R

(t) = r(t) *

θJA

R

= 80°C/W

θ

JA

P(pk)

t1

t

2

0.001

0.01

0.1

1

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

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