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STUD432L Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STUD432L Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page S mHop Microelectronics C orp. a PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 40V 42A 15 @ VGS=4.5V 10 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO251 Package. N-Channel Logic Enhancement Mode Field Effect Transistor Ver 1.0 www.samhop.com.tw Oct,12,2011 1 Details are subject to change without notice. G G S S STU SERIES TO - 252AA( D- PAK ) G G S S D D STD SERIES TO - 251( I - PAK ) STU/D432L Gre rr P Pr P P o rr Symbol VDS VGS IDM A ID Units Parameter 40 V V ±20 Gate-Source Voltage Drain-Source Voltage ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A TC=25°C W PD °C -55 to 150 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 50 °C/W Thermal Resistance, Junction-to-Ambient R JA 3 °C/W Thermal Resistance, Junction-to-Case R JC TC=70°C A EAS mJ Single Pulse Avalanche Energy d TC=70°C W a a a a 121 42 123 42 34 27 |
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Descripción similar - STUD432L |
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