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DMMT3904WQ-7-F Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMMT3904WQ-7-F Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 6 page  DMMT3904W Document number: DS30311 Rev. 12 - 2 3 of 6 www.diodes.com May 2014 © Diodes Incorporated DMMT3904W Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO 60 ⎯ ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage(Note 9) BVCEO 40 ⎯ ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6.0 ⎯ ⎯ V IE = 100µA, IC = 0 Collector Cutoff Current ICEX ⎯ ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL ⎯ ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V ON CHARACTERISTICS (Note 9) DC Current Gain hFE 40 70 100 60 30 ⎯ ⎯ ⎯ 300 ⎯ ⎯ ⎯ IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 200 300 mV IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 ⎯ ⎯ 850 950 mV IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA MATCHING CHARACTERISTICS DC Current Gain Matching (Note 10 ) hFE1 / hFE2 ⎯ 1 2 % IC = 2mA, VCE = 5V Base-Emitter Voltage Matching (Note 11 ) VBE1 - VBE2 ⎯ 1 2 mV IC = 2mA, VCE = 5V Collector-Emitter Saturation Voltage (Note 10) VCE(SAT)1 / VCE(SAT)2 ⎯ 1 2 % IC = 10mA, IB = 1.0mA Base-Emitter Saturation Voltage (Note 10) VBE(SAT)1 / VBE(SAT)2 ⎯ 1 2 % IC = 10mA, IB = 1.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 ⎯ 10 k Ω VCE = 10V, IC = 1.0mA, f = 1.0kHz Voltage Feedback Ratio hre 0.5 ⎯ 8 x 10 -4 Small Signal Current Gain hfe 100 ⎯ 400 ⎯ Output Admittance hoe 1.0 ⎯ 40 μS Current Gain-Bandwidth Product fT 300 ⎯ ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF ⎯ ⎯ 5.0 dB VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz SWITCHING CHARACTERISTICS Delay Time td ⎯ ⎯ 35 ns VCC = 3.0V, IC = 10mA, VBE(off) = -0.5V, IB1 = 1.0mA Rise Time tr ⎯ ⎯ 35 ns Storage Time ts ⎯ ⎯ 200 ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Fall Time tf ⎯ ⎯ 50 ns Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 10. Is the ratio of one transistor compared to the other transistor. 11. VBE1 - VBE2 is the absolute difference of one transistor compared to the other transistor. |
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