CSDD-25B datasheet(1/2 Pages) CENTRAL

No. de pieza	CSDD-25B

Descripción Electrónicos	SURFACE MOUNT SILICON CONTROLLED RECTIFIER

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Fabricante Electrónico	CENTRAL [Central Semiconductor Corp]

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CSDD-25M

CSDD-25N

SURFACE MOUNT

SILICON CONTROLLED RECTIFIER

25 AMP, 600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSDD-25M series

type is an Epoxy Molded Silicon Controlled Rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

CSDD-25M CSDD-25N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

600

800

V

RMS On-State Current (TC=90°C)

IT(RMS)

25

A

Peak Non-Repetitive Surge Current, t=8.3ms

ITSM

260

A

Peak Non-Repetitive Surge Current, t=10ms

ITSM

250

A

I2t Value for Fusing, t=10ms

I2t

310

A2s

Peak Gate Power, tp=10μs

PGM

40

W

Average Gate Power Dissipation

PG(AV)

1.0

W

Peak Forward Gate Current, tp=10μs

IFGM

4.0

A

Peak Forward Gate Voltage, tp=10μs

VFGM

16

V

Peak Reverse Gate Voltage, tp=10μs

VRGM

5.0

V

Critical Rate of Rise of On-State Current

di/dt

100

A/μs

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

Thermal Resistance

ΘJA

60

°C/W

Thermal Resistance

ΘJC

1.3

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM

Rated VDRM, VRRM

10

μA

IDRM, IRRM

Rated VDRM, VRRM, TC=125°C

4.0

mA

IGT

VD=12V, RL=10Ω

4.2

30

mA

IH

IT=100mA

12.5

50

mA

VGT

VD=12V, RL=10Ω

0.65

1.50

V

VTM

ITM=50A, tp=380μs

1.80

V

dv/dt

VD=2/3 VDRM, TC=125°C

200

V/μs

D2PAK CASE

R2 (17-February 2010)

www.centra lsemi.com

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