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KF3N50DZ Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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KF3N50DZ Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
2 / 6 page 2010. 11. 29 2/6 KF3N50DZ/DS Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=22mH, IS=3A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤3A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%. Note 5) Essentially independent of operating temperature. 2 PRODUCT NAME LOT NO 1 001 2 KF3N50 DZ 1 001 2 KF3N50 DS 1 Marking CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250㎂ , VGS=0V 500 - - V Breakdown Voltage Temperature Coefficient ΔBV DSS/ΔTj ID=250㎂, Referenced to 25℃ - 0.55 - V/ ℃ Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±25V, VDS=0V - - ±10 ㎂ Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.25A - 2.0 2.5 Ω Dynamic Total Gate Charge Qg VDS=400V, ID=3A VGS=10V (Note4,5) - 8.0 - nC Gate-Source Charge Qgs - 2.0 - Gate-Drain Charge Qgd - 3.5 - Turn-on Delay time td(on) VDD=250V ID=3A RG=25Ω (Note4,5) - 15 - ns Turn-on Rise time tr - 20 - Turn-off Delay time td(off) - 25 - Turn-off Fall time tf - 20 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 350 - pF Output Capacitance Coss - 45 - Reverse Transfer Capacitance Crss - 4.5 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 3 A Pulsed Source Current ISP - - 12 Diode Forward Voltage VSD IS=2.5A, VGS=0V - - 1.4 V Reverse Recovery Time KF3N50DZ trr IS=3A, VGS=0V, dIs/dt=100A/ ㎲ - 300 - ns KF3N50DS - 120 - Reverse Recovery Charge KF3N50DZ Qrr - 1.1 - μC KF3N50DS - 0.25 - |
Número de pieza similar - KF3N50DZ_15 |
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Descripción similar - KF3N50DZ_15 |
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