2011. 10. 27

2/6

KF5N65D/I

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25

℃)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width

≤300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

2

PRODUCT NAME

LOT NO

1

001

2

2

KF5N65

D

1

001

KF5N65

I

1

Marking

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

650

-

-

V

Breakdown Voltage Temperature Coefficient

ΔBV

-

0.7

-

V/

℃

Drain Cut-off Current

-

-

10

㎂

Gate Threshold Voltage

2.5

-

4.5

V

Gate Leakage Current

-

-

±100

nA

Drain-Source ON Resistance

-

1.5

1.75

Ω

Dynamic

Total Gate Charge

(Note4,5)

-

14.5

-

nC

Gate-Source Charge

-

3.0

-

Gate-Drain Charge

-

5.8

-

Turn-on Delay time

(Note4,5)

-

35

-

ns

Turn-on Rise time

-

35

-

Turn-off Delay time

-

65

-

Turn-off Fall time

-

25

-

Input Capacitance

-

720

-

pF

Output Capacitance

-

72

-

Reverse Transfer Capacitance

-

7.2

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

5.5

A

Pulsed Source Current

-

-

22

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

dIs/dt=100A/

㎲

-

300

-

ns

Reverse Recovery Charge

-

1.8

-

μC