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KF19N20D Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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KF19N20D Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
2 / 6 page 2014. 12. 01 2/6 KF19N20D/I Revision No : 2 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 1.54mH, IS=15A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤19A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. KF19N20 D KF19N20 I Marking CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250μ A, VGS=0V 200 - - V Breakdown Voltage Temperature Coefficient ΔBV DSS/ΔTj ID=250μ A, Referenced to 25 ℃ - 0.23 - V/ ℃ Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=7.5A - 0.13 0.155 Ω Dynamic Total Gate Charge Qg VDS=160V, ID=19A VGS=10V (Note4,5) - 21 - nC Gate-Source Charge Qgs - 4.3 - Gate-Drain Charge Qgd - 8.2 - Turn-on Delay time td(on) VDD=100V, ID=19A RG=25Ω (Note4,5) - 20 - ns Turn-on Rise time tr - 22 - Turn-off Delay time td(off) - 59 - Turn-off Fall time tf - 17 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 855 - pF Output Capacitance Coss - 165 - Reverse Transfer Capacitance Crss - 25 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 15 A Pulsed Source Current ISP - - 60 Diode Forward Voltage VSD IS=15A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=19A, VGS=0V, dIs/dt=100A/ ㎲ - 145 - ns Reverse Recovery Charge Qrr - 0.8 - μC |
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