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IRF40H210 Datasheet(PDF) 3 Page - International Rectifier |
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IRF40H210 Datasheet(HTML) 3 Page - International Rectifier |
3 / 11 page IRF40H210 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 1, 2015 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 113 ––– ––– S VDS = 10V, ID = 100A Qg Total Gate Charge ––– 101 152 ID = 100A Qgs Gate-to-Source Charge ––– 30 ––– VDS = 20V Qgd Gate-to-Drain Charge ––– 31 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg – Qgd) ––– 70 ––– td(on) Turn-On Delay Time ––– 9.2 ––– ns VDD = 20V tr Rise Time ––– 25 ––– ID = 30A td(off) Turn-Off Delay Time ––– 65 ––– RG= 2.7 tf Fall Time ––– 34 ––– VGS = 10V Ciss Input Capacitance ––– 5406 ––– pF VGS = 0V Coss Output Capacitance ––– 805 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 518 ––– ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 962 ––– VGS = 0V, VDS = 0V to 32V Coss eff.(TR) Output Capacitance (Time Related) ––– 1179 ––– VGS = 0V, VDS = 0V to 32V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 100 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 400* integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.8 1.2 V TJ = 25°C,IS = 100A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 6.2 ––– V/ns TJ = 150°C,IS = 100A,VDS = 40V trr Reverse Recovery Time ––– 21 ––– ns TJ = 25°C ––– 22 ––– TJ = 125°C Qrr Reverse Recovery Charge ––– 32 ––– nC TJ = 25°C ––– 38 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.0 ––– A TJ = 25°C nC D S G VR = 34V, IF = 100A di/dt = 100A/µs |
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