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IRF1405PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF1405PBF
Descripción Electrónicos  Advanced Process Technology
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF1405PBF Datasheet(HTML) 2 Page - International Rectifier

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IRF1405PbF
2
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 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.11mH
RG = 25Ω, IAS = 101A. (See Figure 12).
ƒ ISD ≤ 101A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.6
5.3
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
69
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
170
260
Qgs
Gate-to-Source Charge
–––
44
66
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
62
93
td(on)
Turn-On Delay Time
–––
13
–––
tr
Rise Time
–––
190
–––
td(off)
Turn-Off Delay Time
–––
130
–––
ns
tf
Fall Time
–––
110
–––
LD
Internal Drain Inductance
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
5480
–––
Coss
Output Capacitance
–––
1210
–––
Crss
Reverse Transfer Capacitance
–––
280
–––
pF
Coss
Output Capacitance
–––
5210
–––
Coss
Output Capacitance
–––
900
–––
Coss eff.
Effective Output Capacitance
g
–––1500–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
88
130
ns
Qrr
Reverse Recovery Charge
–––
250
380
nC
ton
Forward Turn-On Time
–––
–––
169
h
–––
–––
680
4.5
–––
–––
–––
–––
7.5
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 25V, ID = 101A
ID = 101A
VDS = 44V
Conditions
VGS = 10V
f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.5
VGS = 20V
MOSFET symbol
showing the
integral reverse
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
p-n junction diode.
TJ = 25°C, IS = 101A, VGS = 0V f
TJ = 25°C, IF = 101A
di/dt = 100A/µs
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 101A f
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
f
VDD = 38V
ID = 101A
RG = 1.1 Ω
VGS = -20V


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