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MRF177 Datasheet(Hoja de datos) 1 Page - Tyco Electronics

No. de Pieza. MRF177
Descripción  N-CHANNEL BROADBAND RF POWER MOSFET
Descarga  9 Pages
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Fabricante  MACOM [Tyco Electronics]
Página de inicio  http://www.macom.com
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The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in push–pull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
• Typical Performance at 400 MHz, 28 V:
Output Power — 100 W
Gain — 12 dB
Efficiency — 60%
• Low Thermal Resistance
• Low Crss — 10 pF Typ @ VDS = 28 Volts
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
• Excellent Thermal Stability; Suited for Class A
Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25
°C
PD
270
1.54
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Temperature Range
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction–to–Case
R
θJC
0.65
°C/W
(1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF177
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 744A–01, STYLE 2
2
1, 4
3
6
5, 8
7
Order this document
by MRF177/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 9




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