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IRF6711STRPBF Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF6711STRPBF
Descripción Electrónicos  RoHS Compliant and Halogen Free
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF6711STRPBF Datasheet(HTML) 1 Page - International Rectifier

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1
11/11/09
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.54mH, RG = 25Ω, IAS = 15A.
Notes:
IRF6711SPbF
IRF6711STRPbF
DirectFET
™ Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Typical values (unless otherwise specified)
PD - 96280
0
5
10
15
20
25
30
35
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
ID= 15A
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
0
5
10
15
ID = 15A
TJ = 25°C
TJ = 125°C
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6711STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6711STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
l RoHS Compliant and Halogen Free

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application

l Compatible with existing Surface Mount Techniques

l 100% Rg tested
DirectFET
™ ISOMETRIC
SQ
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
V
A
15
Max.
15
84
150
±20
25
19
62
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 3.0m
Ω @ 10V 5.2mΩ @ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
13nC
4.4nC
1.8nC
21nC
9.5nC
1.8V


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