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PZTA44 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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PZTA44 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 3 page  2005. 1. 17 1/3 SEMICONDUCTOR TECHNICAL DATA PZTA44 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 0 HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=2W(TC=25 ) MAXIMUM RATING (Ta=25 ) + _ 6.5 0.2 + _ + _ + _ A 1 12 3 3 2 SOT-223 L K G J H D F E B C 0.26+0.09/-0.02 10 MAX 0.1 MAX 1.75 0.25 3.0+0.15/-0.1 2.3 TYP 7 0.3 0.7+0.15/-0.1 1.8 MAX 3.5 0.2 DIM MILLIMETERS H E B J F F G K L C D A 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 500 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA Collector Power Dissipation (TC=25 ) PC 2 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 500 - - V Collector-Emitter Breakdown Voltage (1) V(BR)CEO IC=1mA, IB=0 400 - - V Collector-Emitter Breakdown Voltage (2) V(BR)CES IC=100 A, IB=0 400 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V Collector Cut off Current ICBO VCB=400V, IE=0 - - 100 nA VCB=320V, IE=0 Collector Cut off Current ICES VCE=400V, IB=0 - - 500 nA VCE=320V, IB=0 Emitter Cutoff Current IEBO VEB=4V, IC=0 - - 100 nA DC Current Gain * hFE VCE=10V, IC=1mA 40 - - VCE=10V, IC=10mA 50 - 200 VCE=10V, IC=50mA 45 - - VCE=10V, IC=100mA 40 - - Collector-Emitter Saturation Voltage * VCE(sat) IC=10mA, IB=1mA - - 0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=10mA, IB=1mA - - 0.75 V Collector Output Capacitane Cob VCB=20V, IE=0, f=1MHz - - 7 pF |
Número de pieza similar - PZTA44_15 |
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Descripción similar - PZTA44_15 |
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