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TIP36C Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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TIP36C Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2001. 1. 18 1/2 SEMICONDUCTOR TECHNICAL DATA TIP36C TRIPLE DIFFUSED PNP TRANSISTOR Revision No : 3 HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP35C. Icmax:-25A. MAXIMUM RATING (Ta=25 ) 1. BASE 2. COLLECTOR 3. EMITTER TO-3P(N) K A D B d P PT M Q 12 3 A 15.9 MAX MILLIMETERS DIM B 4.8 MAX C 20.0 0.3 D 2.0 0.3 d 1.0+0.3/-0.25 E2.0 F 1.0 G 3.3 MAX H9.0 I4.5 J 2.0 K 1.8 MAX L 20.5 0.5 P 5.45 0.2 Q Φ3.2 0.2 T 0.6+0.3/-0.1 2.8 M + _ + _ + _ + _ + _ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -10 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 A Collector-emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -100 - - V DC Current Gain hFE(1) (Note) VCE=-5V, IC=-1.5A 55 - 160 hFE(2) VCE=-4V, IC=-15A 15 - - Collector-Emitter Saturation Voltage VCE(sat)(1) IC=-15A, IB=-1.5A - - -1.8 V VCE(sat)(2) IC=-25A, IB=-5.0A - - -4.0 Base-Emitter Voltage VBE VCE=-5V, IC=-5A - - -1.5 V Transition Frequency fT VCE=-5V, IC=-1A 3.0 - - MHz CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Collector Current IC -25 A Base Current IB -5.0 A Collector Power Dissipation (Tc=25 ) PC 125 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : hFE(1) Classification R:55~110, O:80~160 |
Número de pieza similar - TIP36C_15 |
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Descripción similar - TIP36C_15 |
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