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IRF7351PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF7351PBF
Descripción Electrónicos  Low Power Motor Drive Systems
Download  10 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7351PBF Datasheet(HTML) 2 Page - International Rectifier

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IRF7351PbF
2
www.irf.com
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.068
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
13.7
17.8
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-8.2
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
18
–––
–––
S
Qg
Total Gate Charge
–––
24
36
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.8
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.2
–––
nC
Qgd
Gate-to-Drain Charge
–––
7.2
–––
Qgodr
Gate Charge Overdrive
–––
11.8
–––
See Fig. 17
Qsw
Switch Charge (Qgs2 + Qgd)
–––
8.4
–––
Qoss
Output Charge
–––
7.5
–––
nC
td(on)
Turn-On Delay Time
–––
5.1
–––
tr
Rise Time
–––
5.9
–––
ns
td(off)
Turn-Off Delay Time
–––
17
–––
tf
Fall Time
–––
6.7
–––
Ciss
Input Capacitance
–––
1330
–––
Coss
Output Capacitance
–––
190
–––
pF
Crss
Reverse Transfer Capacitance
–––
92
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
1.8
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
64
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
20
30
ns
Qrr
Reverse Recovery Charge
–––
61
92
nC
–––
ID = 6.4A
VGS = 0V
VDS = 30V
VGS = 10V
Typ.
–––
VDS = VGS, ID = 50µA
RG = 1.8
VDS = 25V, ID = 6.4A
VDS = 60V, VGS = 0V, TJ = 125°C
TJ = 25°C, IF = 6.4A, VDD = 30V
di/dt = 300A/µs
e
TJ = 25°C, IS = 6.4A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VDS = 16V, VGS = 0V
VDD = 30V, VGS = 10V e
ID = 6.4A
VDS = 30V
VGS = 20V
VGS = -20V
VDS = 60V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 8.0A e
Conditions
Max.
325
6.4
ƒ = 1.0MHz


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