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IRF7351PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7351PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page IRF7351PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.068 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 13.7 17.8 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -8.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 18 ––– ––– S Qg Total Gate Charge ––– 24 36 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.8 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC Qgd Gate-to-Drain Charge ––– 7.2 ––– Qgodr Gate Charge Overdrive ––– 11.8 ––– See Fig. 17 Qsw Switch Charge (Qgs2 + Qgd) ––– 8.4 ––– Qoss Output Charge ––– 7.5 ––– nC td(on) Turn-On Delay Time ––– 5.1 ––– tr Rise Time ––– 5.9 ––– ns td(off) Turn-Off Delay Time ––– 17 ––– tf Fall Time ––– 6.7 ––– Ciss Input Capacitance ––– 1330 ––– Coss Output Capacitance ––– 190 ––– pF Crss Reverse Transfer Capacitance ––– 92 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 1.8 (Body Diode) A ISM Pulsed Source Current ––– ––– 64 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 20 30 ns Qrr Reverse Recovery Charge ––– 61 92 nC ––– ID = 6.4A VGS = 0V VDS = 30V VGS = 10V Typ. ––– VDS = VGS, ID = 50µA RG = 1.8 Ω VDS = 25V, ID = 6.4A VDS = 60V, VGS = 0V, TJ = 125°C TJ = 25°C, IF = 6.4A, VDD = 30V di/dt = 300A/µs e TJ = 25°C, IS = 6.4A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol VDS = 16V, VGS = 0V VDD = 30V, VGS = 10V e ID = 6.4A VDS = 30V VGS = 20V VGS = -20V VDS = 60V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 8.0A e Conditions Max. 325 6.4 ƒ = 1.0MHz |
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