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IRF7468PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7468PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7468PbF 2 www.irf.com Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 27 ––– ––– S VDS = 20V, ID = 8.0A Qg Total Gate Charge ––– 23 34 ID = 8.0A Qgs Gate-to-Source Charge ––– 6.4 9.6 nC VDS = 20V Qgd Gate-to-Drain ("Miller") Charge ––– 6.7 10 VGS = 4.5V, Qoss Output Gate Charge ––– 17 26 VGS = 0V, VDS = 16V td(on) Turn-On Delay Time ––– 7.6 ––– VDD = 20V tr Rise Time ––– 2.3 ––– ID = 8.0A td(off) Turn-Off Delay Time ––– 20 ––– RG = 1.8Ω tf Fall Time ––– 3.8 ––– VGS = 4.5V Ciss Input Capacitance ––– 2460 ––– VGS = 0V Coss Output Capacitance ––– 490 ––– VDS = 20V Crss Reverse Transfer Capacitance ––– 38 ––– pF ƒ = 1.0MHz Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 160 mJ IAR Avalanche Current ––– 8.0 A Avalanche Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.81 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V ––– 0.65 ––– TJ = 125°C, IS = 8.0A, VGS = 0V trr Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 8.0A, VR=20V Qrr Reverse Recovery Charge ––– 76 110 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 58 87 ns TJ = 125°C, IF = 8.0A, VR=20V Qrr Reverse Recovery Charge ––– 110 160 nC di/dt = 100A/µs S D G Diode Characteristics 2.3 74 A VSD Diode Forward Voltage Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω µA Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.025 ––– V/°C Reference to 25°C, ID = 1mA ––– 11.7 15.5 VGS = 10V, ID = 9.4A ––– 13.0 17.0 VGS = 4.5V, ID = 7.5A ––– 18.0 35.0 VGS = 4.5V, ID = 4.7A VGS(th) Gate Threshold Voltage 0.8 ––– 2.0 V VDS = VGS, ID = 250µA ––– ––– 20 VDS = 32V, VGS = 0V ––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V |
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