Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The new Micro8 package, with half the footprint area of the standard SO-8,

provides the smallest footprint available in an SOIC outline. This makes the

Micro8 an ideal device for applications where printed circuit board space is

at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily

into extremely thin application environments such as portable electronics and

PCMCIA cards.

02/13/12

IRF7501PbF

Description

Parameter

Max.

Units

Drain-Source Voltage

20

V

2.4

1.9

A

Pulsed Drain Current



19

Maximum Power Dissipation

„

1.25

W

Maximum Power Dissipation

„

0.8

W

Linear Derating Factor

0.01

W/°C

Gate-to-Source Voltage Single Pulse tp<10μs16

V

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt

‚

5.0

V/ns

TJ , TSTG

Operating Junction and Storage Temperature Range

-55 to + 150

°C

Soldering Temperature, for 10 seconds

240 (1.6mm from case)

Absolute Maximum Ratings

Parameter

Max.

Units

Maximum Junction-to-Ambient

„

100

°C/W

Thermal Resistance

Micro8

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

PD - 95345A

www.irf.com

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