DMB54D0UV

Document number: DS31676 Rev. 5 - 2

2 of 7

www.diodes.com

March 2012

© Diodes Incorporated

DMB54D0UV

Characteristic

Symbol

Value

Units

Drain-Source Voltage

50

V

Gate-Source Voltage

±12

V

Drain Current (Note 4)

Continuous

160

mA

Pulsed Drain Current (Note 4)

560

mA

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-45

V

Emitter-Base Voltage

-5.0

V

Collector Current

-100

mA

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 4)

250

mW

Thermal Resistance, Junction to Ambient (Note 4)

500

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

50

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

10

μA

Gate-Body Leakage

⎯

⎯

1.0

5.0

μA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.7

0.8

1.0

V

Static Drain-Source On-Resistance

⎯

3.1

4

Ω

⎯

4

5

Forward Transconductance

180

⎯

⎯

mS

f = 1.0KHz

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

⎯

25

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

5

⎯

pF

Reverse Transfer Capacitance

⎯

2.1

⎯

pF

Notes:

4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.