DMG9926USD_15 datasheet(4/6 Pages) DIODES

No. de pieza	DMG9926USD

Descripción Electrónicos	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Fabricante Electrónico	DIODES [Diodes Incorporated]

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4 / 6 page

DMG9926USD

Document number: DS31757 Rev. 5 - 2

4 of 6

www.diodes.com

February 2014

DMG9926USD

0

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

I = 1mA

D

I = 250µA

D

0.01

0.1

1

10

0.4

0.5

0.6

0.7

0.8

0.9

1

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

T = 25°C

A

0

5

10

15

20

Fig. 9 Typical Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

10

100

1,000

10,000

f = 1MHz

Ciss

Coss

Crss

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

0.1

1

10

100

1,000

10,000

0

2

4

6

8

10

1214

1618 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Fig. 11 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

0.001

0.01

0.1

1

T - T = P * R

(t)

Duty Cycle, D = t /t

JA

12



R

(t) = r(t) *

JA

R

= 99°C/W



JA

P(pk)

t1

t2

D = 0.7

D = 0.5

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

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