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IRF7832PBF-1 Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF7832PBF-1
Descripción Electrónicos  Industry-standard pinout SO-8 Package
Download  10 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7832PBF-1 Datasheet(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
Notes
 through „ are on page 10
Applications
l Synchronous MOSFET for Notebook Processor Power
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
W
PD @TA = 70°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
°C/W
RθJA
Junction-to-Ambient f
–––
50
-55 to + 155
2.5
0.02
1.6
Max.
20
16
160
± 20
30
IRF7832PbF-1
Form
Quantity
Tube/Bulk
95
IRF7832PbF-1
Tape and Reel
4000
IRF7832TRPbF-1
Package Type
Standard Pack
Orderable Part Number
IRF7832PbF-1
SO-8
Base Part Number
Features
Benefits
Industry-standard pinout SO-8 Package
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free
Environmentally Friendlier
MSL1, Industrial qualification
Increased Reliability
VDS
30
V
RDS(on) max
(@VGS = 10V)
4.0
Qg (typical)
34
nC
ID
(@TA = 25°C)
20
A
mΩ
1
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November 22, 2013


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