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IRF9395MPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF9395MPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRF9395MPbF 2 © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 Pulse width ≤ 400μs; duty cycle ≤ 2%. Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.012 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 5.3 7.0 ––– 9.0 11.9 VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 40 ––– ––– S Qg Total Gate Charge ––– 64 ––– Qg Total Gate Charge ––– 32 ––– Qgs1 Pre- Vth Gate-to-Source Charge ––– 6.5 ––– VDS = -15V Qgs2 Post -Vth Gate-to-Source Charge ––– 3.2 ––– VGS = -4.5V Qgd Gate-to-Drain Charge ––– 15 ––– ID = -11A Qgodr Gate Charge Overdrive ––– 7.3 ––– See Fig.15 Qsw Switch charge (Qgs2 + Qgd) ––– 18.2 ––– Qoss Output Charge ––– 23 ––– nC RG Gate Resistance ––– 15 ––– Ω td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 142 ––– td(off) Turn-Off Delay Time ––– 76 ––– tf Fall Time ––– 121 ––– Ciss Input Capacitance ––– 3241 ––– Coss Output Capacitance ––– 820 ––– Crss Reverse Transfer Capacitance ––– 466 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) g VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 43 65 ns Qrr Reverse Recovery Charge ––– 62 93 nC ns pF A ––– ––– ––– ––– -57 -110 μA m Ω nA nC di/dt = 260A/μs h TJ = 25°C, IS = -11A, VGS = 0V h showing the integral reverse p-n junction diode. VGS = -4.5V, ID = -11 A h TJ = 25°C, IF = -11A, ,VDD = -15V VGS = 0V VDS = -15V ID = -11A VDD = -15V, VGS = -4.5VÃh VDS = VGS, ID = -50μA VDS = -16V, VGS = 0V VGS = -20V VGS = 20V Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -14A h VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C MOSFET symbol RG = 1.8Ω VDS = -15V, ID = -11A Conditions See Fig.17 ƒ = 1.0KHz VDS = -15V, VGS = -10V, ID = -11A G D S |
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