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IRF9395MPBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF9395MPBF
Descripción Electrónicos  Isolation Switch for Input Power or Battery Application
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF9395MPBF Datasheet(HTML) 2 Page - International Rectifier

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IRF9395MPbF
2
© 2014 International Rectifier
Submit Datasheet Feedback
February 24, 2014
† Pulse width ≤ 400μs; duty cycle ≤ 2%.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.012
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.3
7.0
–––
9.0
11.9
VGS(th)
Gate Threshold Voltage
-1.3
-1.8
-2.4
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-6.1
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-150
IGSS
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
gfs
Forward Transconductance
40
–––
–––
S
Qg
Total Gate Charge
–––
64
–––
Qg
Total Gate Charge
–––
32
–––
Qgs1
Pre- Vth Gate-to-Source Charge
–––
6.5
–––
VDS = -15V
Qgs2
Post -Vth Gate-to-Source Charge
–––
3.2
–––
VGS = -4.5V
Qgd
Gate-to-Drain Charge
–––
15
–––
ID = -11A
Qgodr
Gate Charge Overdrive
–––
7.3
–––
See Fig.15
Qsw
Switch charge (Qgs2 + Qgd)
–––
18.2
–––
Qoss
Output Charge
–––
23
–––
nC
RG
Gate Resistance
–––
15
–––
Ω
td(on)
Turn-On Delay Time
–––
16
–––
tr
Rise Time
–––
142
–––
td(off)
Turn-Off Delay Time
–––
76
–––
tf
Fall Time
–––
121
–––
Ciss
Input Capacitance
–––
3241
–––
Coss
Output Capacitance
–––
820
–––
Crss
Reverse Transfer Capacitance
–––
466
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
g
VSD
Diode Forward Voltage
–––
–––
-1.2
V
trr
Reverse Recovery Time
–––
43
65
ns
Qrr
Reverse Recovery Charge
–––
62
93
nC
ns
pF
A
–––
–––
–––
–––
-57
-110
μA
m
Ω
nA
nC
di/dt = 260A/μs
h
TJ = 25°C, IS = -11A, VGS = 0V h
showing the
integral reverse
p-n junction diode.
VGS = -4.5V, ID = -11 A h
TJ = 25°C, IF = -11A, ,VDD = -15V
VGS = 0V
VDS = -15V
ID = -11A
VDD = -15V, VGS = -4.5VÃh
VDS = VGS, ID = -50μA
VDS = -16V, VGS = 0V
VGS = -20V
VGS = 20V
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -14A h
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
MOSFET symbol
RG = 1.8Ω
VDS = -15V, ID = -11A
Conditions
See Fig.17
ƒ = 1.0KHz
VDS = -15V, VGS = -10V, ID = -11A
G
D
S


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