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IRF9956PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF9956PBF
Descripción Electrónicos  ULTRA LOW ON TESISTANCE
Download  7 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF9956PBF Datasheet(HTML) 2 Page - International Rectifier

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IRF9956PbF
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– 0.82 1.2
V
TJ = 25°C, IS = 1.25A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
27
53
ns
TJ = 25°C, IF = 1.25A
Qrr
Reverse RecoveryCharge
–––
28
57
nC
di/dt = 100A/µs ƒ
Source-Drain Ratings and Characteristics
––– –––
––– –––
16
1.7
A
S
D
G
… Surface mounted on FR-4 board, t ≤ 10sec.
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ I
SD ≤ 2.0A, di/dt ≤ 100A/µs, V
DD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting TJ = 25°C, L = 22mH
RG = 25Ω, IAS = 2.0A.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.015 –––
V/°C Reference to 25°C, ID = 1mA
––– 0.06 0.10
VGS = 10V, ID = 2.2A „
––– 0.09 0.20
VGS = 4.5V, ID = 1.0A „
VGS(th)
Gate Threshold Voltage
1.0 ––– –––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
–––
12
–––
S
VDS = 15V, ID = 3.5A
––– ––– 2.0
VDS = 24V, VGS = 0V
––– –––
25
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
––– ––– 100
VGS = 24V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -24V
Qg
Total Gate Charge
––– 6.9
14
ID = 1.8A
Qgs
Gate-to-Source Charge
––– 1.0
2.0
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
––– 1.8
3.5
VGS = 10V, See Fig. 10 „
td(on)
Turn-On Delay Time
––– 6.2
12
VDD = 10V
tr
Rise Time
––– 8.8
18
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
13
26
RG = 6.0Ω
tf
Fall Time
––– 3.0
6.0
RD = 10Ω „
Ciss
Input Capacitance
––– 190 –––
VGS = 0V
Coss
Output Capacitance
––– 120 –––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
61
–––
ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns


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