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IRFB4227PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRFB4227PBF
Descripción Electrónicos  Advanced Process Technology
Download  8 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFB4227PBF Datasheet(HTML) 2 Page - International Rectifier

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IRFB4227PbF
2
www.irf.com
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
170
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
19.7
24
m
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-13
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
1.0
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
49
–––
–––
S
Qg
Total Gate Charge
–––
70
98
nC
Qgd
Gate-to-Drain Charge
–––
23
–––
td(on)
Turn-On Delay Time
–––
33
–––
ns
tr
Rise Time
–––
20
–––
td(off)
Turn-Off Delay Time
–––
21
–––
tf
Fall Time
–––
31
–––
tst
Shoot Through Blocking Time
100
–––
–––
ns
EPULSE
Energy per Pulse
µJ
Ciss
Input Capacitance
–––
4600
–––
Coss
Output Capacitance
–––
460
–––
pF
Crss
Reverse Transfer Capacitance
–––
91
–––
Coss eff.
Effective Output Capacitance
–––
360
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energyd
mJ
EAR
Repetitive Avalanche Energy ™
mJ
VDS(Avalanche)
Repetitive Avalanche VoltageÙ
V
IAS
Avalanche CurrentÃd
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C Continuous Source Current
–––
–––
65
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
260
(Body Diode)Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
100
150
ns
Qrr
Reverse Recovery Charge
–––
430
640
nC
VDD = 100V
ID = 46A
RG = 2.5Ω
VGS = 10V e
–––
570
–––
–––
910
–––
33
39
–––
–––
240
–––
Typ.
Max.
ƒ = 1.0MHz,
–––
140
TJ = 25°C, IF = 46A, VDD = 50V
di/dt = 100A/µs e
TJ = 25°C, IS = 46A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 46A e
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VGS = 0V, VDS = 0V to 160V
VDS = 200V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 0V
L = 220nH, C= 0.4µF, VGS = 15V
MOSFET symbol
VDS = 25V, ID = 46A
VDD = 100V, ID = 46A, VGS = 10Ve
Conditions
and center of die contact
VDD = 160V, VGS = 15V, RG= 4.7Ω
VDS = 160V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7Ω, TJ = 100°C
VDS = 25V


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