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IRFB7746PBF Datasheet(PDF) 3 Page - International Rectifier |
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IRFB7746PBF Datasheet(HTML) 3 Page - International Rectifier |
3 / 10 page IRFB7746PbF 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 132 ––– ––– S VDS = 10V, ID = 35A Qg Total Gate Charge ––– 55 83 ID = 35A Qgs Gate-to-Source Charge ––– 12 ––– VDS = 38V Qgd Gate-to-Drain Charge ––– 16 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg – Qgd) ––– 39 ––– td(on) Turn-On Delay Time ––– 9.9 ––– ns VDD = 38V tr Rise Time ––– 36 ––– ID = 35A td(off) Turn-Off Delay Time ––– 33 ––– RG= 2.7 tf Fall Time ––– 30 ––– VGS = 10V Ciss Input Capacitance ––– 3049 ––– pF VGS = 0V Coss Output Capacitance ––– 255 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 236 ––– VGS = 0V, VDS = 0V to 60V Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 300 ––– VGS = 0V, VDS = 0V to 60V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 59 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 219 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 35A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 8.0 ––– V/ns TJ = 175°C,IS = 35A,VDS = 75V trr Reverse Recovery Time ––– 28 ––– ns TJ = 25°C VDD = 64V ––– 33 ––– TJ = 125°C IF = 35A, Qrr Reverse Recovery Charge ––– 30 ––– nC TJ = 25°C di/dt = 100A/µs ––– 42 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.8 ––– A TJ = 25°C nC D S G |
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