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IRFH5025PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH5025PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5025PbF S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.31 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 84 100 mΩ VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 13 ––– ––– S Qg Total Gate Charge ––– 37 56 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.3 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– Qgd Gate-to-Drain Charge ––– 13 ––– Qgodr Gate Charge Overdrive ––– 14 ––– See Fig.17 & 18 Qsw Switch Charge (Qgs2 + Qgd) ––– 15 ––– Qoss Output Charge ––– 11 ––– nC RG Gate Resistance ––– 1.6 ––– Ω td(on) Turn-On Delay Time ––– 9.0 ––– tr Rise Time ––– 6.3 ––– td(off) Turn-Off Delay Time ––– 17 ––– tf Fall Time ––– 6.1 ––– Ciss Input Capacitance ––– 2150 ––– Coss Output Capacitance ––– 150 ––– Crss Reverse Transfer Capacitance ––– 40 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 55 83 ns Qrr Reverse Recovery Charge ––– 510 770 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VDS = VGS, ID = 150μA A 5.7 ––– ––– 46 ––– ––– nA ns ––– Typ. ––– RG=1.8Ω pF Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.7A e Conditions See Fig.15 Max. 320 5.7 ƒ = 1.0MHz di/dt = 500A/μs eà TJ = 25°C, IS = 5.7A, VGS = 0V e showing the integral reverse p-n junction diode. VDS = 250V, VGS = 0V nC VGS = 10V TJ = 25°C, IF = 5.7A, VDD = 125V MOSFET symbol VDS = 16V, VGS = 0V VDD = 125V, VGS = 10V ID = 5.7A VGS = 0V VDS = 50V VDS = 50V, ID = 5.7A VDS = 250V, VGS = 0V, TJ = 125°C ID = 5.7A VGS = 20V VGS = -20V VDS = 125V Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case 0.5 0.8 RθJC (Top) Junction-to-Case f ––– 15 °C/W RθJA Junction-to-Ambient g ––– 35 RθJA (<10s) Junction-to-Ambient g ––– 22 |
Número de pieza similar - IRFH5025PBF_15 |
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Descripción similar - IRFH5025PBF_15 |
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