IRFH7188PBF_15 datasheet(1/9 Pages) IRF

No. de pieza	IRFH7188PBF

Descripción Electrónicos	Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies

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Fabricante Electrónico	IRF [International Rectifier]

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FastIRFET™

IRFH7188PbF

1

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July 20, 2015

HEXFET® Power MOSFET

VDSS

100

V

RDS(on) max

(@ VGS = 10V)

6.0



m



Qg (typical)

33

nC

Rg (typical)

0.92



ID

(@TC (Bottom) = 25°C)

105

A

PQFN 5X6 mm

Notes  through  are on page 9

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFH7188PbF

PQFN 5mm x 6 mm

Tape and Reel

4000

IRFH7188TRPbF

Features

Benefits

Low Thermal Resistance to PCB (<0.95°C/W)

Increased Power Density

Low Profile (<1.05 mm)

results in Increased Power Density

Industry-Standard Pinout



Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant, Halogen-Free

Environmentally Friendlier

MSL1

Increased Reliability

100% Rg Tested

Increased Reliability

Low RDS(ON) (< 6.0m)

Lower Conduction Losses

Applications

 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies

 Secondary Side Synchronous Rectifier

 Hot Swap and Active O-Ring

Absolute Maximum Ratings

Parameter

Max.

Units

VGS

Gate-to-Source Voltage

± 20

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

18

A

ID @ TC(Bottom) = 25°C

Continuous Drain Current, VGS @ 10V

105

ID @ TC(Bottom) = 100°C

Continuous Drain Current, VGS @ 10V

66

IDM

Pulsed Drain Current 

210

PD @TA = 25°C

Power Dissipation

3.8

W

PD @TC(Bottom) = 25°C

Power Dissipation

132

Linear Derating Factor

0.03

W/°C

TJ

Operating Junction and

-55 to + 150

°C

TSTG

Storage Temperature Range

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IRFH7188PBF Datasheet(PDF) 1 Page - International Rectifier

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